Abstract: Ultrawide bandgap III-nitride semiconductors, e.g., aluminum nitride (AlN) and their alloys with gallium (Ga), boron (B), and scandium (Sc), have emerged as one of the most promising material platforms for a broad range of applications, including deep ultraviolet (UV) optoelectronics, integrated quantum photonics, and high power and high frequency electronics. In this talk, I will present recent advances of their epitaxy/synthesis, electronic, optical, and quantum properties, including the development of high efficiency deep UV LEDs, the demonstration of electrically pumped deep UV laser diodes, the first demonstration of ferroelectric switching in epitaxial compound semiconductors, and the discovery of unusually large exciton binding energy of monolayer III-nitrides. Their significantly enhanced nonlinear optical properties through strain, polarization, and quantum engineering will also be presented.
Biography: Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of low dimensional semiconductors and their applications in electronic, photonic, clean energy, and quantum devices and systems. Prof. Mi has received the Science and Engineering Award from W. M. Keck Foundation in 2020, the David E. Liddle Research Excellence Award in 2021, the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015, and the IEEE Photonics Society Distinguished Lecturer Award in 2020. Prof. Mi currently serves as the Editor of Progress in Quantum Electronics. He also served as the Serial Editor of Semiconductors and Semimetals. Prof. Mi is a fellow of SPIE and OSA.
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