Events for UCF Researchers and the UCF Research Community
Title: Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed Polarization Doping Abstract: Nearly ideal vertical p-n diodes are demonstrated on the AlN platform. Distributed polarization doping (DPD) – a novel doping technology based on the polarization effect in III-Nitride materials – was utilized to overcome the major bottleneck in AlN-based devices: the control of conductivity. The fabricated devices exhibited …
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