Title: Demonstration of AlN-based Vertical p-n Diodes with Dopant-Free Distributed Polarization Doping

Abstract: Nearly ideal vertical p-n diodes are demonstrated on the AlN platform. Distributed polarization doping (DPD) – a novel doping technology based on the polarization effect in III-Nitride materials – was utilized to overcome the major bottleneck in AlN-based devices: the control of conductivity. The fabricated devices exhibited record electrical properties, including a desired effective doping concentration, a low turn-on voltage (6.5 V), a low on-resistance (3 mΩ cm2), and a high breakdown electric field (7.3 MV/cm). These results highlight the effectiveness of DPD for AlN-based devices, along with the great potential of “semiconducting” AlN as a material for power device applications.

About the Speaker: Mr. Takeru Kumabe is a Ph.D. student at the Department of Electronics, Nagoya University, Japan. He received his master’s and bachelor’s degrees from the Department of Electronics, Nagoya University, in 2021 and 2019, respectively, under the supervision of Professors Yoshio Honda and Hiroshi Amano. His research interests include the design, crystal growth, fabrication, and characterization of GaN and AlN-based vertical bipolar devices.